A 10 GHz Quasi-Optical Grid Amplifier Using Integrated HBT Differential Pairs - Device Research Conference, 1992. DIgest. 50th Annual
نویسندگان
چکیده
Moonil Kim a, E. A. Sovero b, W. J. Hob, J. B. Hacker a,David B. Rutledge a, James J. Rosenberg c. and R. Peter Smith d aDivision of Engeineering and Applied Science, California Institute of Technology, Pasadena CA 91125 bscience Center, Rockwell International Corporation, P. 0. Box 1085, 1049 Camino Dos Rios, Thousand Oaks, CA 91358 CGermanium Power Devices Corporation, P. 0. Box 3065 SVS, Andover, MA 01810 dCenter for Space Microelectronic Technology, Jet Propulsion laboratory, 4800 Oak Grove Drive, Pasadena, CA 91109
منابع مشابه
A 100-Element MODFET Grid Amplifier - Antennas and Propagation Society International Symposium, 1995. AP-S. Digest
A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFET’s). Common-mode oscillations were suppressed using resistors in the input gate leads. The grid has 9 dB of gain at 10.1 GHz. The 3-dB bandwidth is 1.2 GHz. We present a model for the gain of the grid versus frequency and compare measurement with theory.
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